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http://localhost:8081/jspui/handle/123456789/21610Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Mishra, Manmathesh | - |
| dc.date.accessioned | 2026-09-20T07:26:44Z | - |
| dc.date.available | 2026-09-20T07:26:44Z | - |
| dc.date.issued | 2023-05 | - |
| dc.identifier.uri | http://localhost:8081/jspui/handle/123456789/21610 | - |
| dc.guide | Rawat, Karun | en_US |
| dc.description.abstract | The increasing need for faster wireless data transfer and the subsequent rise in mobile data traffic have prompted cellular network designers to explore the potential of fifth generation (5G) mobile networks. These networks will take advantage of the wide bandwidths available in the microwave and millimeter-wave (mm-wave) frequency ranges to provide data transfer rates of several gigabits per second. As wireless communication continues to advance, new frontiers are being explored by RF circuit designers. Efficient, linear, and wideband operation are now essential requirements for all communication standards. However, due to the high-power consumption of wireless systems, the Power Amplifier (PA) has become a critical component. Achieving maximum PA efficiency while minimizing power dissipation and maintaining the required output power has become a challenging task for designers. The power amplifier is designed in a two-stage cascode configuration using heterojunction bipolar transistors in the 130nm SiGe BiCMOS process PDK from Global Foundries. To ensure a balance between efficiency and linearity, the power amplifier is operated in class AB. The output impedance is optimized using load-pull modeling to achieve an optimum output power. The simulation results show that at a frequency of 47 GHz, the gain is 16 dB and the peak power added efficiency is 20%. Furthermore, the obtained output power is 15.6 dBm at the 3dB compression point. This thesis introduces an offset broadside-coupled tandem coupler designed for operation at 47 GHz using 130nm SiGe Technology. Through simulations, the performance characteristics of the coupler are evaluated, resulting in the following values: an insertion loss of 0.7 dB, input return loss of 31 dB, isolation of 34 dB, and a phase difference of 90 degrees. These measurements were obtained across a frequency range spanning from 40 GHz to 60 GHz. Furthermore, the thesis explores the application of the tandem coupler as a power combiner in conjunction with an adaptive biasing network. Simulation results demonstrate that at a frequency of 47 GHz, the coupler achieves gain of 10.9 dB, a peak power added efficiency of 21.5%, and an output power of 18.1 dBm at the 3dB compression point. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IIT Roorkee | en_US |
| dc.title | Design OF A Millimetre-Wave Power Amplifier Using 130 nm SiGe BiCMOS Technology | en_US |
| dc.type | Dissertations | en_US |
| Appears in Collections: | MASTERS' THESES (E & C) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 21533007_Manmathesh Mishra.pdf | 6.55 MB | Adobe PDF | View/Open |
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