STUDY OF THE CONTACT RESISTANCE OF DIFFERENT METALS WITH 2D MoS2 FOR FUTURE FET APPLICATIONS

Abstract

For quite some time now a shift has been observed in academia as well as industry from bulk to 2D devices. The reason being a higher mobility of carriers and low contact resistances. In continuation of the same in this thesis an attempt has been made to come up with the combination of 2D materials which offer least amount of contact resistance. Towards this a single sheet of MoS2 has been generated in Quantum Atomistic Toolkit (QATK) and its band gap has been deduced. Next alterations have been made in the crystal so as to match its band gap with that of the real crystal. It is followed by the contacts being made with various metals. Bandgaps of each metal are matched and verified to be zero. We have used Landauer Buttiker Equation to find the current through the junction and arrive at the resistance using those current voltage characteristics, we need transmission spectrum and Density of States. The transmission spectrum and Density of States have been obtained from first-principle simulations. Finally, a comparison has been made among the resistances of different combinations and the junction offering us the least amount of resistance has been concluded.