Fabrication and Characterization of Foldable Resistive Random Access Memory (RRAM)

Abstract

Great attention has been achieved by flexible electronic devices as now a day foldable devices are being made with the help of flexible electronic devices. They are also used in synaptic bionics, actuators, electronic watches, foldable mobiles, and many more. Hence there is much requirement to enhance the performance of foldable memory so as to increase data extraction and storage capability. Because of its straightforward construction and nonvolatile properties, RRAM has become the most suitable bendable memory to be used for commercial purposes. Foldable RRAM now has a minimum bending radius of up to 2 mm. However, the reliability and durability of such devices are not that good due to cracks being developed in the bending process. It is possible to stabilize the conductive filaments of bendable RRAM by doing appropriate doping at charge trap sites. This work mainly emphasizes the fabrication of Foldable RRAM on ITO-coated PET substrate; indium gallium zinc oxide (IGZO) is taken as dielectric material with suitable doping so as to achieve desired conductive filament and Aluminum as Active Electrode. Four different kinds of devices are fabricated, the first device is simple Foldable RRAM, the second device has photoresist on IGZO, the third device has photoresist along with exposure, and the fourth device has photoresist, exposure, and hard bake. Various characteristics of pre-bending and post-bending i.e., I vs. V, R vs. T, I vs. T, R vs. Cycle #, Vset & Vreset of all the devices are measured, and suitable conclusion is drawn at end of this dissertation.