TIGHT BINDING MODEL STUDY OF GADOLINIUM IODIDE MONOLAYER

Abstract

Nature is inhewntly quantum mechanical. Using the laws of quantum me- chanics we can explain and further exploit new kinds of materials called Quantum materials whose properties cannot be explained by the classical laws Of physics. The ever increasing computational demand and the inevitable end of Moorv'.s Law makes us look for new degrees of freedom, particularly spintronics and val- leytronics, we will focus on the latter in this dissertation. This dissertation consists of five chapters. The first chapter introduces the tight binding model and calculation Of dispersion relation a.s as density Of states for squalV and triangular lattice. The second chapter introduces the idea of valleytmnics and calculation of band structure using tight binding method for various gadolinium halides. In the third and the fourth chapters calculation for Berry curvature and degree of circular polarization have been done for Gd12. Finally in the last chapter we will summarize and conclude the dissertation.