Silicon inverted pyramid array as a broad band absorber: Theoretical analysis

Abstract

This thesis studies the broadband absorption characteristics of silicon wafers with various shapes and different thicknesses using the finite-difference time-domain (FDTD) simulation technique. We focus on the reflection, transmission, and absorption of silicon nanowires and inverted pyramids in the wavelength range of 250nm to 1700nm. For the FDTD simulation, we use MATLAB software. Our simulation results show that changing the geometry and thickness of Silicon can significantly increase its absorption efficiency of Silicon in the visible and NIR range. These results have been essential to developing efficient and cost effective broadband absorbers and have significant consequences for applications such as optical sensors, solar cells, photodetectors, microelectronics, and semiconductor electronics.