Properties of thin metal oxide films By pulsed laser deposition

Abstract

The fabrication of semiconductor thin film of Nickel oxide is successfully demonstrated by pulsed laser deposition technique. The NiO thin films were deposited under various oxygen partial pressures at the equivalent experimental conditions. The structural and optical properties of NiO thin films under varying oxygen partial pressure were investigated. Thin metal oxide NiO film deposited varying background oxygen pressure from 0 to 120 m Torr range. X-ray diffraction (XRD) pattern of NiO attained by X-ray diffractometer, and crystalline size of NiO determined. The pulse laser deposited thin films are exhibiting high optical transmittance at room temperature. NiO Band-gap obtained in range of 3.5 to 3.9eV using Tauc method.