TCAD Modelling and Analysis of GaN semiconductor devices

Abstract

This work mainly emphasizes on the application Gallium Nitride in power semiconductor devices, such as a Schottky Barrier Diode and optoelectronic devices like Light Emitting Diode and MSM Photodetectors. Gallium Nitride being a wide band gap material, at the same time, being a direct band gap material finds a wide range of applications in the domains listed above. Because of its wide band gap, it has the ability to withstand higher voltages before the breakdown, compared to narrow band gap materials like Silicon or Germanium. Also, its direct band gap means that radiative recombination is a major contributor for charge carrier recombination in the devices based on Gallium Nitride and hence it is being used in optoelectronic devices. In this work, various novel devices structures of Schottky diode, LED and self powered MSM photodetectors are simulated and analysed using the Silvaco TCAD modelling platform.