DIFFUSION MASKS IN THE FABRICATION OF MICROMINIATURIZED DEVICES

Abstract

With the growing .need of the microminiaturized devices and circuits# it becomes neceeeary to investigate their fabrication techniques and thus come up with improved versions. Here en attempt has been made to start the fabrication of devices in the laboratory. In this connec-tiong as it is necessary to have a diffusion mask for selective ditfustor,o, growth of diffusion masks on the starting wafers becomes necessary. The best known diffusion mask Is that of silicon dioxide. Diffusion made for silicon and germanium have been obtained and now method for depositing silicon dioxide on germanium has been developed. Theoretical and experimental results have been compared uetng experimental and computed results. A p-n junction has also been fabricated and its electrical characteristics have been dram. Final Finallj some suggestions are given for some further work in this field.