Please use this identifier to cite or link to this item: http://localhost:8081/xmlui/handle/123456789/2073
Full metadata record
DC FieldValueLanguage
dc.contributor.authorSingh, Gajendra-
dc.date.accessioned2014-09-26T10:54:15Z-
dc.date.available2014-09-26T10:54:15Z-
dc.date.issued1974-
dc.identifierM.Techen_US
dc.identifier.urihttp://hdl.handle.net/123456789/2073-
dc.guidePrakash, Om-
dc.description.abstract•iatc contacts are very Important Thr solid sta.ts device fabrication. Contacts have been fabricated by vacuuasporattng gold* tin and *l int * onto the nwtype silicon and gez ania 4 Their VX character-* iatioe have been checked on oscilloscope - sor en and have been plotted using D.C. setup. wroitic ontact- aesiat u s for each contact has been evaluated by •BodywResistanc• cslculotion' method. Contact (n0, Au) shove the best result as erica contact and contact (nsSL, Au) shove the 'rectifying' nature. A jot-electroplating apparatus has been *aatgned and constructed, in order to got plated comic contacts. Further, an attempt has been made to develop + c-contact.reeistance- meter to facilitate the future investigation wait for contact-evaluation.en_US
dc.language.isoenen_US
dc.subjectDEVICEen_US
dc.subjectFABRICATIONen_US
dc.subjectSEMICONDUCTORen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.titleFABRICATION AND EVALUATION OF OHMIC CONTACTS TO SEMICONDUCTORSen_US
dc.typeM.Tech Dessertationen_US
dc.accession.number107919en_US
Appears in Collections:MASTERS' THESES (E & C)

Files in This Item:
File Description SizeFormat 
ECD107919.pdf3.87 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.