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|Title:||FABRICATION AND EVALUATION OF OHMIC CONTACTS TO SEMICONDUCTORS|
|Keywords:||DEVICE;FABRICATION;SEMICONDUCTOR;ELECTRONICS AND COMPUTER ENGINEERING|
|Abstract:||•iatc contacts are very Important Thr solid sta.ts device fabrication. Contacts have been fabricated by vacuuasporattng gold* tin and *l int * onto the nwtype silicon and gez ania 4 Their VX character-* iatioe have been checked on oscilloscope - sor en and have been plotted using D.C. setup. wroitic ontact- aesiat u s for each contact has been evaluated by •BodywResistanc• cslculotion' method. Contact (n0, Au) shove the best result as erica contact and contact (nsSL, Au) shove the 'rectifying' nature. A jot-electroplating apparatus has been *aatgned and constructed, in order to got plated comic contacts. Further, an attempt has been made to develop + c-contact.reeistance- meter to facilitate the future investigation wait for contact-evaluation.|
|Research Supervisor/ Guide:||Prakash, Om|
|Appears in Collections:||MASTERS' DISSERTATIONS (E & C)|
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