IMPACT OF PROCESS INDUCED MECHANICAL STRESS ON FinFETs

Abstract

In the era of nano-technology devices are working near ballistic regime with scaling down channel length. Due to decrease in channel length control of gate on channel get decreased. So Multi-Gate devices are used to enhance the performance but it was not enough Strain engineering is used to improve device characteristics commensurately with the physical scaling in 3D MOS device technology. Therefore, application of strain on MultiGate structures is an important part of process flow. Strain engineering is done in order to introduce mechanical stress in the channel and extension region to improve FinFET performance. Among various ways of process induced mechanical stress, Si3N4 on extension region is a way to introduce mechanical stress. So we here observes the effect of stress on channel with various extension lengths. Device performance of depends on the injection velocity (V) and backscattering ratio (r), so here we analyze how these parameters depends on stress. Here, we also analyze how virtual source peak varies with different extension length(stress).