DESIGN OF WIDEBAND POWER AMPLIFIER BY USING LDMOS TECHNOLOGY

Abstract

RF Power Amplifiers are crucial for transmission chain in any communication system. For long distance communication, there’s an inevitable need for a massive boost-up of the power to be delivered to the system. They find applications in wireless communication. This makes the Power Amplifier (PA) design to be a challenging task given that the desirable parameters like power delivered, PAE and gain hold a lot of importance. Moreover, choice of the class of the PA is based on the need of linearity and efficiency. As of now, a lot of research work on LDMOS based PAs is going on subject to the ruggedness and cost effectiveness offered by the LDMOS technology at low frequencies. This thesis studies the development of an LDMOS based power amplifier in a frequency band of 10 MHz to 100 MHz. The design is chosen to operate in class AB. The amplifier was designed using the N-channel LDMOS transistor device (MRF6V2150NR1). The entire design was prepared and simulated on Keysight Advanced Design Systems (ADS). The PA design proposed in this thesis offers 60.8%of efficiency (PAE) and delivers 52 dBm (Pdel) at the operating frequency of 50 MHz. The large signal gain is measured to be around 35 dB over the operating frequency band.