PREDICTIVE MODELLING OF STT-MRAM THROUGH ARTIFICAL NEURAL NETWORK

Abstract

An STT-MRAM memory array's individual cells must fulfil certain performance requirements to function reliably. The basic physical concepts of STT-MRAM are reviewed and some of these needs are described. In this study we are trying to analyze the effect of various parameter on magnetization and trying to model it with machine learning model with the comparison of natural way of finding the magnetization of stt-mram cell through llg equation.