ANALYSIS OF CIRCUIT PERFORMANCE ACCOUNTING FOR ADVANCED DEVICE AND INTERCONNECT EFFECTS

Abstract

The semiconductor industry is currently undergoing transformative changes driven by technological advancements and the escalating demand for high-performance electronic devices. This thesis explores emerging industry trends, focusing on the application of Gate-All- Around Field-Effect Transistors (GAAFETs) and their role in enhancing device performance and scaling. GAAFETs, with their superior electrostatic control and reduced leakage currents, represent a significant leap over traditional FinFETs, offering promising solutions for future technology nodes. Another area of exploration in this thesis is the potential of Single-Walled Carbon Nanotubes (SWCNTs) in semiconductor applications. SWCNTs, known for their exceptional electrical, thermal, and mechanical properties, are poised to revolutionize interconnects and transistors. Their unique characteristics make them ideal candidates for overcoming current limitations in miniaturization and performance enhancement, including lower resistivity at nanoscale dimensions, high current carrying capacity with lower electromigration susceptibility, better thermal conductivity, and high mechanical strength and flexibility. The study concludes with an unbiased evaluation of the feasibility and impact. This evaluation is based on the BSIM CMG Nanosheet GAAFET model and IEEE International Roadmap for Devices and Systems (IRDS) predictions, providing valuable insights for researchers, industry professionals, and policymakers engaged in the developing nextgeneration semiconductor technologies.