DESIGN, ANALYSIS AND CHARACTERISATION OF GaN HEMT BASED POWER AMPLIFIER

Abstract

Inrceasing data rates in mobile communications and high-speed wireless networks require proved spectrum efficiency by a parallel and software defined operation of the wireless infrastructure. The trend of the modern wireless transceiver design is an integrated circuit that can work across multiple standards, be reconfigurable and employ the maximum hardware share with the minimum power dissipation. In this report, the design of concurrent dual-band power amplifier working at 1.96 GHz/2.3 GHz has been described. The power amplifier is biased to work in class AB operation. The method has been verified with simulated results based on the 6W CaN based CREE model. Load pull simulations are done to derive the suitable input and output impedances. The input matching network is designed to provide conjugate match at the input of the amplifier. The output matching network is designed such that optimum impedance is seen by the device at its output. The peak drain efficiency of the amplifier is 66.314% at 1.96GHz and 63.76% at 2.3 GHz. The saturated output power at 1.96GHz and 2.3 GHz is found to be at 38.987 dBm and 39.403 dBm respectively with a gain of more than 15 dB at saturated power. Both the single tone and tone analysis of the amplifier has been done and finally the circuit is fabricated.