SILICON AND Ill-V BASED FINFET MODELING

Abstract

Multiple Gate MOSFETs (ie. Double-gate, Tn-Gate, Quadruple-Gate, Pi-Gate Omega-Gate and Surrounding Gate) are the strongest contender in future to ftirther scale down the CMOS technology due to their excellent control on short channel effects (SCEs). Modeling of the current (Ids -Vd and 'd -Vgs) of lightly doped long channel and short channel double gate (DG) FINFETs which we get from the analytical solution of the Poisson's equation is done in the Verilog-A. In the implementation, explicit method is used for solving an implicit equation in the calculation of drain current. For AC and transient simulations, analytical charge and capacitance modeling is also done for lightly doped long channel DGFINFET. In lightly doped short channel double gate FINFET short channel effects (ic threshold voltage roll-off and DLBL effect), quantum effect, mobility degradation, channel length modulation (CLM), drain voltage saturation and source-drain parasitics are successfully incorporated. After the modeling of the short channel double gate FINFET, modeling of the triple gate FINFET (TGFINFET) has also been done and IN characteristics are successftilly matched with TCAD data for the 15nm channel length. For the triple gate model the same double gate current model has been used. In sentaurus the 3D structure of the triple gate FINFET was simulated for the TCAD data. To make the robust model, which can be used for the circuit simulation the capacitance model has been also incorporated. The TCAD simulation for the short channel lnGaAs based tn-gate nMOSFET device has been also demonstrated which show higher mobility and better control over short channel effects.