ANALYSIS OF STATIC RANDOM ACCESS MEMORY

Abstract

In todays world, memory is the most important component in VLSI chip design. Memory finds its most important application in most micro-processor to store the data,. Memory cell is also required to read and write the data. SRAM is one of the types of memory. We have used a new method to simulate static random access memory cell in this thesis. We have used the Predictive Technology Model (PTM) card in PSPICE. We have carried out this project to study and improve the performance characteristics of the SRAM. In microelectronic circuit design the six transistors SRAM cell is the most important circuits. We have selected the 6T SRAM cell to be design and investigated in this project because of the higher merits of the cell in comparison with the other different type of cell. Our main objectives of this thesis are to design and investigate the SRAM cell by use of the PSPICE software and carry out three operation normal, read and write operations. We have calculated and compared the operation time of each. It is observed that read operation takes higher time than write operation. We have calculated and discussed Static noise margin (SNM) in the write and read operation. It is found that SNM during read simulation is greater than during write simulation. We can make the better design by keeping the static noise margins values smaller. We have to take care of the sizing of each MOSFET because it is really important to achieve the maximum performance