ANALYTICAL MODELLING AND SIMULATION OF MULTI- GATE SILICON NANOWIRE FET FEATURING AMBIPOLARITY AND DUAL-THRESHOLD VOLTAGE CHARACTERISTICS

Abstract

Downscaling of conventional MOSFETs in standard CMOS technology is becoming much tougher each day , since in nanoscale devices, quantum mechanics comes into effect & off-state leakage * increases drastically. In order to counter these obstacles , various transistor architectures like FinFET Silicon Nanowire FET etc have been invented. In this article , a novel idea for analytical modelling of Tn-Gate Silicon Nanowire FET structure has been proposed. This device is conceptualized to show ambipolarity & Dual-Threshold Voltage features , i.e. this uncommitted device can be operated as a pFET or nFET with high or low threshold voltage at the runtime , by electrically tuning its polarity gates