MODELING AND SIMULATION OF RADIATION EFFECTS IN NANOWIRE MOSFETS

Abstract

As the device size is scaling down, it has been observed that their sensitivity to ionizing irradiation is increased. Therefore different-different technological solutions have been proposed such as using the different material instead of conventional material which has been used previously or a complete change in the architecture of MOS devices. Multi-gate MOSFETS are identified as the possible replacement of the bulk MOSFET. Amongst all competing multi-gate MOSFETs, Gate-All-Around MOSFET shows excellent electrostatic control and better response to single event effects. In our work, we have focused on GAA nanowire MOSFET and their response to heavy ion irradiation has been thoroughly studied. We have simulated two cylindrical GAA nanowire MOSFET differ by channel configuration and their performance has been compared when they have subjected to heavy ion strike. All this study has been done with the help of Synopsys, Sentaurus Technology Computer Aided Design (TCAD) 3-D device simulator.