PATTERING OF SI WAFERS FOR SOLAR CELL APPLICATIONS

Abstract

In this research, a series of comparative etching experiments on silicon wafers have been carried out using sodium hydroxide (NaOH) for different concentration of isopropyl alcohol (IPA) on (100) orientation p-type silicon wafers. The surface morphology analysis indicates that the specific position of the wafer, with respect to the different concentration of isopropyl alcohol (IPA). Initially etched the silicon wafers by the sodium hydroxide (NaOH) etchant for different concentration of isopropyl alcohol (IPA). Surface morphology of the silicon wafers are measured by the atomic force microscopy (AFM) and scanning electron microscopy (SEM). The height of pyramids, the separation between the two pyramids and regular arrangement of pyramids are different for different concentration of isopropyl alcohol. Average roughness, reflectance spectra, and other optical constant (refractive index and extinction coefficient) spectra are examined for different of concentration of isopropyl alcohol (IPA).