Please use this identifier to cite or link to this item: http://localhost:8081/jspui/handle/123456789/16389
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dc.contributor.authorJaiswal, Ankita-
dc.date.accessioned2025-05-27T15:01:31Z-
dc.date.available2025-05-27T15:01:31Z-
dc.date.issued2017-03-
dc.identifier.urihttp://localhost:8081/jspui/handle/123456789/16389-
dc.description.abstractThe main aim of this project is development of thin films at lower cost and calculation of the thermoelectric properties of undoped and doped Zinc Oxide(ZnO). The thermoelectric properties include electrical conductivity, thermal conductivity and Seebeck coefficient. This was achieved by growing undoped and doped ZnO on a cleaned glass substrate using Spray Pyrolysis Method at high temperature (~450°C). The precursor used was Zinc Chloride (ZnCl2) and Aluminium Chloride (AlCl3.6H2O) with distilled water in the proportion of 0, 1, 3 and 5% wt. The film formed by spraying solution showed that after doping the film becomes even more conducting. The conclusions made from this experiment are (i) the growth of the film deposition highly depends on the substrate temperature, (ii) the resistivity of the film also depends on the temperature, (iii) increase in doping concentration decreases particle size.en_US
dc.description.sponsorshipINDIAN INSTITUTE OF TECHNOLOGY ROORKEEen_US
dc.language.isoenen_US
dc.publisherIIT ROORKEEen_US
dc.subjectThin Filmsen_US
dc.subjectZinc Oxide(ZnO)en_US
dc.subjectZinc Chloride (ZnCl2)en_US
dc.subjectAluminium Chloride (AlCl3.6H2O)en_US
dc.titleOXIDE MATERIALS FOR THERMOELECTRIC APPLICATIONSen_US
dc.typeOtheren_US
Appears in Collections:MASTERS' THESES (Physics)

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