UNDERSTANDING OF CHARGE TRANSPORT PROPERTIES IN PEROVSKITE LED

Abstract

In past few years, perovskite has been found as promising material for light emitting diodes (LED). The reason behind this is the cost effective formation method by solution process, very high light absorbing capacity and photoluminescence property, tunability of band gap by changing the ions of the material for different color, high color purity and narrow band gap emission. To understand properties of perovskite LED We have fabricated three types of device structure ITO/PEDOT:PSS/MAPbBr3/PCBM/Ag (Device1), ITO/ PEDOT:PSS+GO/MAPbBr3/PCBM/Ag (Device2) and FTO/TiO2/MAPbBr3/ P3HT/Ag (Device3) and Electrical, optical, and structural characteristics of perovskite light-emitting diodes are investigated. The PeLED consisting of ITO/PEDOT:PSS/MAPbBr3 (CH3NH3PbBr3)/PCBM/ Ag , ITO/PEDOT:PSS+GO/MAPbBr3 (CH3NH3PbBr3)/PCBM/Ag and FTO/ TiO2/MAPbBr3 (CH3NH3PbBr3)/P3HT/Ag structures have been compared. We found PL for two device near near 537 nm and absorption peak near 520 nm and by plotting there I-V curve, there series and shunt resistance has been calculated compared for better LED