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http://localhost:8081/xmlui/handle/123456789/15567Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shukla, Harsh Vardhan | - |
| dc.date.accessioned | 2023-07-14T11:54:14Z | - |
| dc.date.available | 2023-07-14T11:54:14Z | - |
| dc.date.issued | 2014-06 | - |
| dc.identifier.uri | http://localhost:8081/xmlui/handle/123456789/15567 | - |
| dc.description.abstract | Heterojunction based devices are playing pivotal role in many applications. These devices have shown better performance than bulk devices. Heterostructures are used to provide high performance in optoelectronic devices. In this dissertation work formation of a heterojunction of Ag2O and AlZnO is intended on glass substrate by pulsed laser deposition. First on glass substrate thin film of Ag2O is deposited and its electrical and optical properties have been studied. Then AlZnO film is deposited over the Ag2O film and electrical measurements have been performed. Band gap, conductivity and lattice parameters of Ag2O films have been calculated. | en_US |
| dc.description.sponsorship | INDIAN INSTITUTE OF TECHNOLOGY ROORKEE | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IIT ROORKEE | en_US |
| dc.subject | Heterostructures | en_US |
| dc.subject | Optoelectronic Devices | en_US |
| dc.subject | Ag2O and AlZnO | en_US |
| dc.subject | Electrical Measurements | en_US |
| dc.title | OPTICAL AND ELECTRICAL PROPERTIES OF ZnO/A92O HETEROSTRUCTURES | en_US |
| dc.type | Other | en_US |
| Appears in Collections: | MASTERS' THESES (Physics) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| G23927.pdf | 8.65 MB | Adobe PDF | View/Open |
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