ADVANCED TURBULENCE MODELLING AND SIMULATIOP IN VARIOUS FLUID FLOW HEAT TRANSFER AND SURFACE CHEMISTRY PHENOMENA

Abstract

For first problem Film cooling is a process that is used to protect turbine vanes in a gas turbine engine from exposure to hot combustion gases. In this paper, we have done the time-dependent analysis of film cooling by large-eddy-simulation (LES) model. We have obtained static-temperature contours, pressure contours, velocity vectors and temperature plot at y = 12.7mm iso-surface at different time interval such as 10second, 20.37second and 40.74second. Significant results have been obtained. For second problem This work is the numerical analysis with the commercial CFD code Fluent 6.2. The purpose is to predict the stall condition for Axial-flow compressor. For this analysis NACA-2415 airfoil is used, as a blade profile. It is recommended that, this airfoil structure can also be used for the blade design of axial flow compressor. The study of flow over blade of compressor at four different angle of attack (AOA) i.e., 100 , 12.5°, 15 °and 16° have been done. Lift-Drag Coefficients have been determined. Velocity vectors, Mach-number contours and pressure contours have been obtained. It has been found the stall angle at 12.5 °. The velocity vectors and Dynamic pressure contours depicts nearly accurate result. The numerical results have been compared with the practical results, which has been carried out by NASA Langley Research Center, and found that the percentage error was less than ± %. For third problem In this work 3D CFD analysis of the Chemical Vapor Deposition Reactor (CVD) reactor has been done. The combined chemical and diffusion process has been taken into account for the formation of gallium and arsenic on the wafer. It has kept, the diffusion velocity; as constant and at different rotation of the wafer the optimum speed has been obtained at which the uniform deposition of the semiconductor materials could be obtained. We have done the analysis at 10rad/s, 20rad/s, 40rad/s, 70rad/s, iii 110rad/s and 120rad/s. It has been pointed out that at 120rad/s when diffusion velocity has kept constant at 0.02189m/s the uniform deposition has been achieved at the wafer surface.