Please use this identifier to cite or link to this item: http://localhost:8081/xmlui/handle/123456789/12127
Title: THE STUDY OF HIGH FIELD EFFECTS IN MOSFET
Authors: Jain, Kavita
Keywords: HIGH FIELD EFFECTS;MOSFET;VLSI;PHYSICS
Issue Date: 1989
Abstract: The Metal-O xide-Semiconductor Field-Effect Transistor (MOSFET) is the most important device for very large scale integ-rated circuits such as : microprocessors and semiconductor memory. MOSFET is also becoming an important power device. It has many acronyms Including IGFET (Insulated-gate Field-effect transistor), MISFET (metal-insulator-semiconductor transistor). Because current in the MOSFET is transported prt:dominantly by carriers of one polarity only(e.g. electrons in an n-channel device), the MOSFET is usually referred to as a unipolar device, the other members of the family of field effect transistors being JFE7A and MOSFETs. MOSFETs have been built in various semiconductors such as Ge, Si, InP, InGaAs and GaAs. Various insulators such as 5102, Si3N4 and f A1203 have been used for gate insulation. The most successful system is the Si-Si02 combination.
URI: http://hdl.handle.net/123456789/12127
Other Identifiers: M.Tech
Research Supervisor/ Guide: Tandon, V. K.
Sarkar, S.
metadata.dc.type: M.Tech Dessertation
Appears in Collections:MASTERS' DISSERTATIONS (Physics)

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